[1963] in OS/2_Discussion
SEMICONDUCTOR ENGINEERING EXECUTIVE!
daemon@ATHENA.MIT.EDU (roldel@earthlink.net)
Wed Mar 21 10:26:02 2001
Date: Wed, 21 Mar 2001 10:25:46 -0500 (EST)
From: roldel@earthlink.net
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SEMICONDUCTOR ENGINEERING EXECUTIVE
===================================================
COVER LETTER:
March 14, 2001
Rolando Delgado
1735 Rutland Drive #111
Austin, TX 78758
(512) 339-996
email:roldel@earthlink.net
To Whom It May Concern:
I am seeking a position that will utilize my broad technical background
in the area of scientific programing and/or electronic technology
development. Accordingly, I am enclosing my resume that describes
my broad technical skills.
Presently, I am unemployed and for the past twelve months I have been
trying to start my own high-tech company which was to provide processing
capabilities for the semiconductor industry, (source/drain salicidation and
fabrication of source/drain junctions.) Unfortunately, I was not able to
acquire the funds for start-up activities and have once again entered the job
market.
As my resume shows I have extensive experience in the area of software/
algorithm development and am proficient with C/C++, FORTRAN, Pascal
UNIX and Linux. In addition, I have extensive industrial experience which
include: semiconductor fabrication and characterization, (both physical and
electrical), fabrication and characterization of a variety of metallic and
magnetic/dielectric thin films, electro-optics, (photoconductivity, optical
absorption), and mathematical analysis,(very strong analytical and
numerical analysis skills).
Please let me know if you need any further information. I look forward to
hearing from you very soon.
Sincerely,
Rolando Delgado, Ph.D.
RESUME:
===================================================
SEMICONDUCTOR ENGINEERING EXECUTIVE
===================================================
ROLANDO DELGADO
Austin, TX
email:roldel@earthlink.net
(512) 339-9961
OBJECTIVE: A position that utilizes my broad background in electronic
technology, including semiconductor fabrication and characterization, test
engineering, or algorithm/software development with an emphasis on
scientific applications.
TECHNICAL SKILLS:
* Extensive computer programming skills with C/C++, Pascal, Fortran, Unix
and Perl.
* Very experienced with software/hardware integration, and real time software development.
* Extensive experience in modeling "short channel effects" in NMOS and
PMOS transistor behavior.
* Broad numerical analysis skills including finite differences, and method of
moments.
* Very experienced with a variety of metallic thin film fabrication and
characterization techniques.
* Wide range of experimental skills in ultra-high vacuum technology.
* Extensive semiconductor detector fabrication and characterization analysis
with IR and UV detectors.
* Very strong technical writing skills and have written many technical reports
in association with research projects.
WORK EXPERIENCE:
New Business Venture: (December 1999 - January 2001)
* Attempted to start a company that utilizes a high-power laser for
semiconductor processing.
* Prepared a very detailed business plan and consulted with attorneys
regarding the articles of incorporation.
Staff Engineer (Advanced Products Research and Development Laboratory),
MOTOROLA, Inc., Austin, TX (October 1994 - December 1999).
* Developed an algorithm using C++ to determine the oxide thickness of thin
oxides (as thin as 30 Angstroms) by analyzing the current-voltage data of NMOS
and PMOS MOSFETS. The program can be used to routinely determine the
oxide thickness of MOS capacitors or the gate oxide thickness of n or p type
MOSFETS. This program was the first of its kind at APRDL.
* Extracted transistor data from Motorola's most advanced 0.12 um CMOS
technology to create updated SPICE models that characterized this technology's performance. The analysis was used to develop updated models that more
correctly predict the electrical characteristics of very short channel n and p type MOSFETS.
* Performed extensive semiconductor device characterization on n and p type
MOSFETS which included CV analysis for gate oxide integrity verification, IV
analysis, both gate and substrate injection and SEM analysis. The analysis also
included linear threshold voltage and transconductance measurements and both
saturated threshold voltage and sub-threshold voltage measurements.
* Documented the effects of laser heating on the formation of cobalt silicide and
titanium silicide over the source/drain regions of MOSFET devices. The reports
included extensive technical writing and the resulting analysis was used to
optimize the laser parameters of a PGILD (Projection Gas Immersion Laser
Doping) system for fabrication of low resistivity salicides.
Senior Staff Physicist (Thin Film Development), ARDEX, Inc; Austin, TX
(1988-1993).
* Completely designed and automated a laboratory that was used to
characterize multilayer magnetic/dielectric thin films. This included the design of
magnetic measuring equipment for magnetic annealing experiments, and
automating the entire experiment for data acquisition/analysis.
* Designed and automated several experiments to fabricate and characterize
nickel-zinc ferrites and amorphous thin films. Utilized extensive computer
simulation techniques to characterize the electromagnetic properties of multilayer
thin films including method of moments.
Member of the Technical Staff (Central Research Laboratories/Infrared Detector
Division), TEXAS INSTRUMENTS; Dallas, TX (1986-1988)
* Designed and automated an experiment that utilized a charge sensitive circuit
that was used to measure the minority carrier lifetime of MOS thin film HgCdTe photocapacitors. The minority carrier lifetime was used to identify unwanted
impurities in the semiconductor material.
* Principal investigator in the characterization of semiconductor alloy material for
the fabrication of infrared detectors. This effort included extensive semiconductor theoretical analysis such as various types of carrier transport, detectivity and
responsivity analysis and quantum efficiency calculations.
* Performed extensive theoretical analysis on the spectral responsivity, detectivity, free-carrier and intrinsic absorption and quantum efficiency of alloy thin film
semiconductor material, HgCdTe. The project also involved extensive use of a
variety UHV systems, IR radiation sources, and cryogenic systems.
Senior Research Engineer (Microelectronics Laboratory), GENERAL DYNAMICS; Pomona, CA (1985-1986)
* Designed and constructed an experiment to determine the carrier concentration,
junction capacitance, series resistance, ideality factor, and quantum efficiency of
II-VI and III-V semiconductor compounds.
* Completely redesigned and automated several experiments for use in the study
of the transport properties of II-VI and III-V semiconductor compounds. The
experiments included setting up and automating an optical test station for use in determining the optically active area and the quantum efficiency of CdS ultraviolet
diodes.
ACADEMIC BACKGROUND:
Bachelor of Science Texas A&M University Physics 1976
Master of Science Texas A&M University Solid State Physics 1978
Doctor of Philosophy Texas A&M University Solid State Physics 1984
ACADEMIC ACHIEVEMENTS:
Magna Cum Laude National Physics Honor Society
REFERENCES:
(Three excellent references available upon request.)
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